|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
1N4150 Small Signal Diodes DO-35 min. 1.083 (27.5) FEATURES Silicon Epitaxial Planar Diode For general purpose and switching. max. .079 (2.0) max. .150 (3.8) This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4150W and the MiniMELF case with the type designation LL4150. Cathode Mark min. 1.083 (27.5) max. .020 (0.52) MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Peak Reverse Voltage Maximum Average Rectified Current Maximum Power Dissipation at Tamb = 25 C Maximum Junction Temperature Maximum Forward Voltage Drop at IF = 200 mA Maximum Reverse Current at VR = 50 V Max. Reverse Recovery Time at IF = IR = 10 to 200 mA, to 0.1 IF V RM I0 Ptot Tj VF IR trr Value 50 200 500 200 1.0 100 4.0 Unit V mA mW C V nA ns 4/98 |
Price & Availability of 1N4150 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |